50V Peak/Working Repetitive Reverse 200 nanoseconds and 1 Amp Reverse Recovery Time DO-41 Case NTE Electronics NTE507 Silicon Rectifier Diode

NTE Electronics NTE507 Silicon Rectifier Diode, DO-41 Case, 50V Peak/Working Repetitive Reverse, 200 nanoseconds and 1 Amp Reverse Recovery Time: Electronics: Industrial & Scientific. NTE Electronics NTE507 Silicon Rectifier Diode, DO-41 Case, 50V Peak/Working Repetitive Reverse, 200 nanoseconds and 1 Amp Reverse Recovery Time: Electronics: Industrial & Scientific. Silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 0 nanoseconds providing high efficiency at frequencies to 20kHz. 。 。 。

50V Peak//Working Repetitive Reverse 200 nanoseconds and 1 Amp Reverse Recovery Time DO-41 Case NTE Electronics NTE507 Silicon Rectifier Diode